Synthesis of samarium oxide films by pulsed laser deposition

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Series titleMRS Proceedings; no. 780
Conference2003 Materials Research Society Spring Meeting, April 21-25, San Francisco, CA
AbstractUniform Samarium oxide (Sm203) films were grown on 75-mm diameter silicon wafers by the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate an Sm2O3 target in an oxygen pressure of 30 mTorr. The crystal structure, surface morphology and optical properties of Sm2O3 films deposited at a temperature range of 25∼680°C were determined by XRD, FE-SEM, and spectra reflectance respectively. Monoclinic structure was the predominant phase for Sm2O3 films deposited at temperatures of 680°C and 400°C. Amorphous or partially crystallized amorphous phase was observed at deposition temperatures of 25°C and 200°C. The Sm2O3 film deposited at 680°C is very dense, while films deposited at lower temperatures have higher porosity. The values of index of refraction, n, and extinction coefficient, k, at λ = 633 nm are 1.867 and 0.0660, respectively, for the 680°C film, and are in a range of 1.5∼1.6 and 0.01∼0.04 respectively for films deposited at lower temperatures.
PublisherMaterials Research Society; Cambridge University Press
AffiliationNRC Industrial Materials Institute; National Research Council Canada
Peer reviewedYes
NPARC number21272522
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Record identifier9a7a467a-1209-4369-8b2b-db1992b44b10
Record created2014-12-01
Record modified2016-05-09
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