Gadolinium oxide and amorphous silicate films deposited on Si(100) by electron-beam evaporation: stability and diffusion

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TypeArticle
ConferenceMaterials Research Society Workshop Series: International Workshop on Devices Technology: Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, 3-5 September 2001
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346177
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Record identifier9a955279-55ed-4dc8-9a67-2f024bd4d93d
Record created2009-09-17
Record modified2016-05-09
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