Probing the Composition of Ge Dots and Si1-xGex Island Superlattices

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DOIResolve DOI: http://doi.org/10.1116/1.2186658
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A
Volume24
Issue3
Pages663667; # of pages: 5
AbstractWe use analytical transmission electron microscopy to map the composition of Ge dot and Si/Si1−xGex island structures grown on (001) Si by molecular beam epitaxy or ultrahigh vacuum chemical vapor deposition. Energy-dispersive x-ray spectroscopy reveals that nominally pure Ge dots grown by molecular beam epitaxy at 650 °C exhibit considerable intermixing with the average Ge composition typically increasing from nearly zero at the base to about 50% at the top of the dot. In pyramid shaped dots, the Ge composition increases linearly up to the top of the dot, while for dome dots, a saturation of the incorporation rate is seen beyond a distance of 7 nm from the substrate interface. Probing of Si/Si1−xGex island superlattices also reveals large Si/Ge intermixing with a Ge accumulation at the crest and Ge depletion at the troughs of the islands. These results are corroborated by x-ray diffraction and Raman scattering measurements.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744813
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Record identifier9ae8b7a2-8abc-4b46-93d2-fab7425ea399
Record created2009-10-27
Record modified2016-05-09
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