Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube p-i-n photodiodes

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DOIResolve DOI: http://doi.org/10.1103/PhysRevLett.108.087404
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TypeArticle
Journal titlePhysical Review Letters
ISSN0031-9007
Volume108
Issue8
Article number87404
SubjectApplied bias; Carrier effective mass; Decay time; Electrons and holes; Escape time; Lower energies; Photocurrent measurement; Photocurrent response; Photon energy; Pin photodiode; Sub-bands; Subpicosecond pulse; Ultra-fast; Variable time delay; Carbon nanotubes; Photodiodes; Photocurrents
AbstractUltrafast photocurrent measurements are performed on individual carbon nanotube p-i-n photodiodes. The photocurrent response to subpicosecond pulses separated by a variable time delay Δt shows strong photocurrent suppression when two pulses overlap (Δt=0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias VSD, and is twice as long for photon energy above the second subband E22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass.
Publication date
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number21270162
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Record identifier9ccf0b38-8193-4318-89c2-935431793846
Record created2014-01-07
Record modified2016-05-09
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