Quantum strain sensor with a topological insulator HgTe quantum dot

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DOIResolve DOI: http://doi.org/10.1038/srep04903
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TypeArticle
Journal titleScientific Reports
ISSN2045-2322
Volume4
Article number4903
AbstractWe present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band k·p Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies (SDT-TSR)
Peer reviewedYes
NPARC number21272288
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Record identifier9cd8ccf3-02a0-407e-a53e-362bbe1227af
Record created2014-07-23
Record modified2016-05-09
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