Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs/GaAs structure for 0.98 μm applications

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ConferenceSemiconductor Laser Conference, 1994., 14th IEEE International, September 19-23, 1994, Maui, Hawaii, United States
Subject0.98 mum; 100 mW; 11 percent; 298 K; circular-grating surface-emitting distributed Bragg reflector laser; CW operation; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; gradient index optics; indium compounds; InGaAs/GaAs structure; InGaAs-GaAs; laser cavity resonators; pulsed external efficiency; quantum well lasers; room temperature; surface emitting lasers; surface-emission DBR lasers
AbstractInGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency, over 11% (power>100 mW) and a divergence of 1° are obtained. We also demonstrate the first CW operation near room temperature
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337700
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Record identifier9d6ce67b-b390-4721-98a8-e58032b96dc9
Record created2009-09-10
Record modified2016-05-09
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