Characterization of SiGe multiple quantum wells by spectroscopic ellipsometry and photoluminescence

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DOIResolve DOI: http://doi.org/10.1016/0040-6090(92)90040-I
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleThin Solid Films
ConferenceEuropean Materials Research Society 1992 Sring Conference, Symposium A: SiGe Based Technologies, 2-4 June 1992, Strasbourg, France
ISSN0040-6090
Volume222
Issue1/2
Pages6972; # of pages: 4
AbstractTwo SiGe multiple quantum well structures that had been characterized already by double-crystal X-ray diffraction (DCXRD) have been examined by spectroscopic ellipsometry (SE) and photoluminescence (PL). Analysis of the SE measurements was based upon the nominal growth conditions rather than the DCXRD findings. This analysis was able to provide the thicknesses and compositions of the layers comprising the heterostructure easily and quickly. Moreover, the SE analysis also provided estimates of the variation in these thicknesses and compositions, as well as in the heterostructure periodicity. It was found that the SE results confirm and enhance the DCXRD findings. The interpretation of the PL spectra benefits from the SE characterization and illuminates the nature of the small uncertainties in composition and layer thickness found by SE. These results demonstrate that SE provides a quick, extensive and reliable post mortem analysis of such materials.
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
Identifier10276968
NRC number1119
NPARC number8897418
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Record identifier9d91393b-1d4c-4ba1-96ca-1f887d7872cc
Record created2009-04-22
Record modified2016-05-09
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