Preparation and characterization of pulsed laser deposition (PLD) SiC films

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DOIResolve DOI: http://doi.org/10.1016/j.apsusc.2005.05.031
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TypeArticle
Journal titleApplied Surface Science
ISSN0169-4332
Volume252
Issue10
Pages33863389; # of pages: 4
SubjectPulsed laser deposition; SiC film; Si K-edge
AbstractSi K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ∼5 J/cm2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.
Publication date
LanguageEnglish
AffiliationNRC Industrial Materials Institute; National Research Council Canada
Peer reviewedYes
NPARC number21275995
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Record identifier9ea70817-512b-4462-9dc6-9f79461dcfa2
Record created2015-09-04
Record modified2016-05-09
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