Low-frequency noise gain and photocurrent gain in quantum well infrared photodetectors

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DOIResolve DOI: http://doi.org/10.1063/1.371624
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TypeArticle
Journal titleJournal of Applied Physics
Volume86
Issue11
Pages65806585; # of pages: 6
Subjectelectron-hole recombination; infrared detectors; photoconductivity; photodetectors; quantum well devices; semiconductor device models; semiconductor device noise
AbstractWe present a theory of the low-frequency noise gain gn and photocurrent gain gp in quantum well infrared photodetectors (QWIPs). Expressions for gn and gp in terms of QW capture probability pc and number of QWs N are obtained. These expressions are valid for any number of QWs N>=1 and capture probability 0<pc<=1. The difference of noise gain from photocurrent gain is due to the discrete structure of generation�recombination centers (QWs) in QWIP. The ratio gn/gp ranges from 0.5 (for pc-->1) to 1 (for pc-->0). QWIP is well described by a conventional photoconductor theory in the case of low capture probability pc-->1, which corresponds to practical QWIPs. The assumptions of the model are discussed in detail, and a comparison with previously published results is made.
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NPARC number12329035
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Record identifier9eb30695-918d-4231-b8b9-6471f0ad8a60
Record created2009-09-10
Record modified2016-05-09
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