Intersubband Raman laser

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Journal titleApplied Physics Letters
Pages35803582; # of pages: 3
Subjectgallium arsenide; aluminium compounds; quantum well lasers; semiconductor quantum wells; III-V semiconductors; raman lasers; optical pumping; laser transitions; phonons
AbstractAn intersubband Raman laser has been realized in an artificial GaAs/AlGaAs three-level quantum-well structure. A CO2 laser in resonance with the one-to-three level transition is used as the pump, while the lasing emission occurs via the three-to-two level transition. The one-to-two level spacing is designed to be in resonance with the AlAs-like longitudinal optical phonon mode, favoring the Raman process. This work presents an alternative mechanism for realizing intersubband lasers and opens up new possibilities in reaching the far infrared region and achieving room-temperature operation.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744785
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Record identifier9f9def82-ac86-4832-8b26-980011d13c0b
Record created2009-10-27
Record modified2016-05-09
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