Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing

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DOIResolve DOI: http://doi.org/10.1016/0022-0248(95)00363-0
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume157
IssueDecember
Pages5760; # of pages: 4
AbstractPhotoluminescence was used to measure the broadening of thin (t = 12-77 ?) SiGe quantum wells (QW) under typical RTA conditions. An anneal time of 300 s and temperatures ranging from 800 to 1000?C were used. "No phonon" SiGe transition energy shifts of up to 65 meV are measured. Results are analyzed taking into account the initial diffusion during growth, the increase in QW bandgap due to intermixing and the decrease in quantum confinement. Interdiffusivity values showing an Arrhenius behavior and an activation energy of 2.7 eV are obtained.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10137063
NPARC number12337984
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Record identifier9fd6dc1c-1829-4b81-9123-00dfb118c5d0
Record created2009-09-10
Record modified2016-05-09
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