Pulsed laser deposition of uniform semiconductor nanodot arrays

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DOIResolve DOI: http://doi.org/10.1007/s00339-012-7158-1
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TypeArticle
Journal titleApplied Physics A
ISSN0947-8396
1432-0630
Volume110
Issue4
Pages817821; # of pages: 5
AbstractUniform arrays of silicon (Si), gallium arsenide (GaAs) and zinc oxide (ZnO) nanodots have been deposited using Pulsed Laser Deposition (PLD) technique combined with a contact mask consisting of nano-holes fabricated by E-beam lithography (EBL). These nanocrystalline semiconductor nanodots have been deposited by PLD on Si and GaAs substrates at room temperature. Characterization of the nanodots has been carried out using different techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Auger Electron Spectroscopy (AES), and Raman spectroscopy. This work demonstrates a novel technique for deposition of uniform array of semiconductor nanostructures using a contact mask at room temperature for photonic applications.
Publication date
PublisherSpringer
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number21268368
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Record identifier9ffde753-f0ee-4de0-a281-aa64b0771333
Record created2013-07-04
Record modified2017-03-23
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