Enhanced conductance of chlorine-terminated Si(111) surfaces : formation of a two-dimensional hole gas via chemical modification

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.71.125308
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TypeArticle
Journal titlePhysical Review B
Volume71
Issue12
Pages125308-1125308-4; # of pages: 4
Subjectchemisorbed layers; chemisorption; chlorine; electron beam effects; electron energy loss spectra; elemental semiconductors; Hall effect; inversion layers; nanotechnology; silicon; surface conductivity; two-dimensional hole gas
AbstractChlorine termination of low-doped, n-type Si(111) is found to lead to an increase in conductance relative to the hydrogen-terminated surface. This increase is attributed to formation of an inversion layer due to the strongly electron withdrawing character of the chemisorbed chlorine. The presence of this inversion layer is confirmed by high resolution electron energy loss spectroscopy and Hall effect measurements. Electron beam irradiation destroys the inversion layer, suggesting a route to nanoscale patterning of this 2D hole gas.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12328087
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Record identifiera084727a-9346-4541-91ff-67797d5dd44f
Record created2009-09-10
Record modified2016-05-09
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