Theory of exciton fine structure in semiconductor quantum dots : Quantum dot anisotropy and lateral electric field

Download
  1. (PDF, 392 KB)
  2. Get@NRC: Theory of exciton fine structure in semiconductor quantum dots : Quantum dot anisotropy and lateral electric field (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1103/PhysRevB.81.045311
AuthorSearch for: ; Search for:
TypeArticle
Journal titlePhysical Review B
Volume81
Issue4
Pages045311-1045311-10; # of pages: 10
AbstractTheory of exciton fine structure in semiconductor quantum dots and its dependence on quantum-dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long-range electron-hole exchange interaction is derived within the k· p effective-mass approximation. The exchange matrix elements of the Hamiltonian are expressed explicitly in terms of electron and hole envelope functions. The matrix element responsible for the “bright” exciton splitting is identified and analyzed. An excitonic fine structure for a model quantum dot with quasi-two-dimensional anisotropic harmonic oscillator confining potential is analyzed as a function of the shape anisotropy, size, and applied lateral electric field.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17320723
Export citationExport as RIS
Report a correctionReport a correction
Record identifiera0b2094e-518e-4343-a2ea-3f979c341fdc
Record created2011-03-26
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)