Dopant layer abruptness in strained Si[1-x]Ge[x] heterostructures

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DOIResolve DOI: http://doi.org/10.1116/1.1689297
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TypeArticle
Journal titleJournal of vacuum science and technology. A
ISSN0734-2101
Volume22
IssueMay 3
Pages939?942
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada
Peer reviewedNo
Identifier1032558x
NRC number1087
NPARC number8899604
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Record identifiera19174dd-36ba-4b73-bca5-51ea0fc48844
Record created2009-04-22
Record modified2016-05-09
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