Conductivity of Si(111)-(7×7): The role of a single atomic step

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DOIResolve DOI: http://doi.org/10.1103/PhysRevLett.112.246802
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TypeArticle
Journal titlePhysical Review Letters
ISSN1079-7114
Volume112
Issue24
Article number246802
SubjectQuantum electronics; Conducting surfaces; First-principles quantum transports; Intrinsic conductivity; Minimal interactions; Orders of magnitude; Per unit length; Surface conductivity; Transport method; Silicon
AbstractWhile it is known that the Si-(7×7) is a conducting surface, measured conductivity values differ by 7 orders of magnitude. Here we report a combined STM and transport method capable of surface conductivity measurement of step-free or single-step containing surface regions and having minimal interaction with the sample, and by which we quantitatively determine the intrinsic conductivity of the Si-(7×7) surface. We found that a single step has a conductivity per unit length about 50 times smaller than the flat surface. Our first principles quantum transport calculations confirm and lend insight into the experimental observation. © 2014 American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21272177
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Record identifiera3f76804-3dbc-409f-8f76-1273efacdbb0
Record created2014-07-23
Record modified2016-05-09
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