Simulation of the hole and current distributions in Si-Ge p-channel FETs with graded profiles

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TypeArticle
Proceedings titleProceeding of the International Semiconductor Device Research Symposium (ISDRS'95)
Conference1995 Second International Semiconductor Device Research Symposium (ISDRS '95), December 5-8, 1995, Charlottesville, Virginia, USA
Volume2
Pages599
Publication date
Linkhttp://www.dtic.mil/cgi-bin/GetTRDoc?AD=ADA311547&Location=U2&doc=GetTRDoc.pdf
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328252
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Record identifiera48607af-8b46-4e2e-ac6b-e3935e90f2e4
Record created2009-09-10
Record modified2016-05-09
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