Microwave measurement of shot noise in resonant tunneling diodes

Download
  1. Get@NRC: Microwave measurement of shot noise in resonant tunneling diodes (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.119599
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume71
Issue4
Pages530532; # of pages: 3
Subjectaluminium compounds; gallium arsenide; high-frequency effects; III-V semiconductors; interface states; resonant tunnelling diodes; semiconductor device noise; semiconductor quantum wells; shot noise
AbstractThe room temperature shot noise of a resonant tunneling diode was determined from microwave measurements as a function of bias. An AlAs/GaAs structure with multiple quasibound well states and asymmetric barrier thicknesses was investigated over a bias regime exceeding the first resonance. In contrast to results for single well state devices, significant noise suppression below the classical limit was also observed for bias ranges beyond the first resonance level. This suppression can be explained by competition between the first and second resonance levels for the thick barrier on the emitter side and due to predominately single barrier tunneling in the reverse polarity.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328976
Export citationExport as RIS
Report a correctionReport a correction
Record identifiera4e81461-8354-488c-b133-9a82ed469f85
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)