Measuring strain fields surrounding grain-boundary dislocations in silicon using scanning transmission electron microscopy

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DOIResolve DOI: http://doi.org/10.1017/S1431927614006965
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TypeArticle
Proceedings titleMicroscopy and Microanalysis
ConferenceMicroscopy and Microanalysis 2014, M and M 2014, 3 August 2014 through 7 August 2014
ISSN1431-9276
Volume20
Issue3
Pages10481049; # of pages: 2
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Energy, Mining and Environment
Peer reviewedYes
NPARC number21275528
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Record identifiera51f9b4d-8d4e-4c55-b45e-63033d87121d
Record created2015-07-14
Record modified2016-05-09
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