AlGaN/GaN HFET devices on SiC grown by ammonia–MBE with high fT and fMAX

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DOIResolve DOI: http://doi.org/10.1049/el:20030354
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TypeArticle
Journal titleElectronics Letters
Volume39
Issue6
Pages564566; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744871
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Record identifiera5298b7d-eabb-4c33-be56-2079291dae09
Record created2009-10-27
Record modified2016-05-09
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