Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique

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DOIResolve DOI: http://doi.org/10.1002/1521-396X(200212)194:2<439::AID-PSSA439>3.0.CO;2-3
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TypeArticle
Journal titlePhysica Status Solidi A: Applications and Materials Science
Volume194
Issue2
Pages439442; # of pages: 4
AbstractOptimization of the electrical characteristics of GaN/AlGaN HFETs grown on SiC substrates by ammonia-MBE is reported. By optimizing the growth conditions, GaN/AlGaN HFETs with room temperature mobilities of sim1000 cm2/Vs and electron sheet densities of up to 1.9 ? 1013 cm?-?2 have been grown on SiC substrates with good reproducibility. These characteristics are comparable to the best characteristics of the GaN/AlGaN HFETs grown on sapphire. Devices fabricated from these optimized HFET layers showed excellent characteristics, e.g. maximum drain current density of 1.3 A/mm, fT of 70 GHz, fMAX of 130 GHz were measured for devices with 0.25 mum gate length and 100 mum gate width.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12339271
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Record identifiera5c5eaa9-f29c-451b-98f8-c9f7b671a3ac
Record created2009-09-11
Record modified2016-05-09
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