Radon monitor using alpha-detecting CMOS IC

DOIResolve DOI: http://doi.org/10.1109/SAS.2016.7479856
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TypeArticle
Proceedings title2016 IEEE Sensors Applications Symposium (SAS)
Conference2016 IEEE Sensors Applications Symposium (SAS), April 20-22, 2016, Catania, Italy
ISBN978-1-4799-7250-0
Pages15
AbstractA radon monitor based on a 3 mm×3 mm alpha-detecting IC fabricated in a foundry CMOS process is reported. The alpha-detecting IC consists of a 16×16 array of pn junction diodes (sense diodes) that are precharged in reverse bias and then allowed to electrically float. Radon progeny is collected on the IC using an electrostatic concentrator. On-chip comparators detect the voltage change induced in a sense diode by an alpha particle emission from collected progeny. The comparator outputs are monitored by a microcontroller which processes the data and transmits it to a microcomputer using Bluetooth. The monitor has a sensitivity of 1.25 counts per hour per 100 Bq/m3 of radon activity. The monitor appears suitable for mass production at very low cost.
Publication date
PublisherIEEE
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedYes
NRC publication
This is a non-NRC publication

"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC.

NPARC number23001037
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Record identifiera6418d06-b70b-47f7-a42a-f22e63bdb959
Record created2016-12-02
Record modified2016-12-02
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