Silicon L2,3-edge XANES study of platinum silicide thin films

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DOIResolve DOI: http://doi.org/10.1557/PROC-441-175
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleThin films--structure and morphology : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
Series titleMaterials Research Society Symposia Proceedings; no. 441
Conference1996 MRS Fall Meeting: Thin Films - Structure and Morphology, December 2-6, 1996, Boston, Massachusetts, U.S.A.
ISSN0272-9172
ISBN1558993452
9781558993457
Pages175179; # of pages: 5
AbstractPlatinum silicide films, with a typical thickness of several hundred Å, prepared on n-type Si(100) wafers by UHV mnagnetron sputter deposition followed by rapid thermal annealing, have been studied by Si L2,3-edge X-ray absorption near edge structure (XANES) using both total electron and total fluorescence yield detection. Samples of various annealing times were studied. XANES provides information on the electronic structure and morphology of the samples. By utilizing the sampling depth difference between the two detection methods, we can clearly see XANES data from each layer (eg. surface oxide, silicide) in the sample and can estimate the thickness of the oxide layer.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12330135
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Record identifiera66b0491-609c-44db-a224-761d8503138a
Record created2009-09-10
Record modified2016-05-09
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