Contact resistance reduction in AlGaN/GaN heterostructure field effect transistors

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DOIResolve DOI: http://doi.org/10.1002/pssc.200390032
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TypeArticle
Journal titlePhysica status solidi C: current topics in solid state physics
Volume0
Issue1
Pages236239; # of pages: 4
AbstractTwo techniques to reduce the contact resistance RC in AlGaN/GaN HFETs have been investigated. Both techniques involve the formation of a matrix of 100 nm diameter pinholes in resist in the contact region using e-beam direct-write lithography. In the first technique, silicon is implanted through the matrix to form doped/damaged filaments extending through the AlGaN cap to the 2DEG. In the second technique, sputtering is used to remove the AlGaN from the pinhole, allowing metal to directly contact the 2DEG. RC was measured as a function of anneal temperature. Si implanted samples gave RC = 0:34 Ωmm for 800°C annealing, roughly half the value of control samples. Sputter etch samples had RC comparable to that of controls.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338332
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Record identifiera6edb741-4102-4145-8c83-3665e3596470
Record created2009-09-10
Record modified2016-05-09
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