Charge trapping in and electrical properties of pulsed laser deposited Sm2O3 films

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DOIResolve DOI: http://doi.org/10.1063/1.1569660
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume93
Issue11
Pages93899391; # of pages: 3
Subjectelectrical properties; pulsed laser deposition; pulsed lasers; thin films; dielectric constant
AbstractThe electrical properties of pulsed laser deposited Sm2O3 films have been studied. The dielectric constants are 9.6 and 12.8 for samples deposited at 400 and 683 °C, respectively. The presence of substantial densities of mobile positive charge and significant negative charge trapping has been evidenced. The leakage current densities are, typically, 10−4 A cm−2 for electric fields∼0.24 MV cm−1.
Publication date
LanguageEnglish
AffiliationNRC Industrial Materials Institute; National Research Council Canada
Peer reviewedYes
NPARC number21272524
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Record identifiera749a7d6-bb84-4372-a621-da7f78b7b910
Record created2014-12-01
Record modified2016-05-09
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