Hafnium silicate gate insulators in field effect sensors used to detect DNA hybridization

DOIResolve DOI: http://doi.org/10.1149/1.2981149
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TypeArticle
Proceedings titleECS Transactions
Conference214th ECS Meeting, October 12-17, 2008, Honolulu, HI
Pages441450
AbstractField-effect sensors with hafnium silicate gate insulators were fabricated following standard CMOS processes and compatible post-processes. The floating gates were functionalized with glycidoxypropyltrimethoxy silane and amine-terminated oligonucleotide probes. The pH sensitivity of the silicate surface decreased from 31.4 mV/pH to 24.6 mV/pH after functionalization due to passivation of a significant fraction of the amphoteric proton binding sites. A threshold voltage shift of 33 mV was observed as the buffer solution concentration changed from 0.015 M to 0.3 M after DNA probe molecule attachment. The hybridization caused a net increase in this shift of 3mV. With the help of a model which includes the solution of the Poisson-Boltzmann and proton site-binding at the gate, methods of achieving higher sensitivity are discussed.
Publication date
PublisherECS
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number23001041
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Record identifiera76e58e2-bd4c-436d-8680-370af96e5171
Record created2016-12-02
Record modified2016-12-02
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