A study of GaAs/AlGaAs p-type quantum well infrared photodetectors with different barrier heights

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DOIResolve DOI: http://doi.org/10.1063/1.366644
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TypeArticle
Journal titleJournal Of Applied Physics
Volume83
Issue1
Pages585587; # of pages: 3
Subjectaluminium compounds; dark conductivity; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells
AbstractWe report on a systematic study of a set of GaAs/AlGaAs p-type quantum well infrared photodetectors with varying barrier heights. The detector cutoff wavelength decreases with increasing barrier height. Experimental photoresponse spectra are in good agreement with calculated ground-state to continuum absorption spectra, based on a multiband envelope-function model. The measured dark current decreases with increasing barrier height. An estimate of the low-field dark current gives good agreement with the measured dark current.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12334523
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Record identifiera7855219-771a-41f8-8896-b9b46c15bd7a
Record created2009-09-10
Record modified2016-05-09
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