Activated transport in the 2D electron solid in Si

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DOIResolve DOI: http://doi.org/10.1016/0921-4526(94)90950-4
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TypeArticle
Journal titlePhysica. B, Condensed matter
Volume194-196
IssuePart 1
Pages12411242; # of pages: 2
AbstractWe describe the characteristics of the temperature activated dc-transport observed in the insulating phase which occurs at dilute concentrations and low temperatures in high mobility 2D electron systems in Si. Our data show the existence of two different temperature regimes, one of which can be fitted well using the phase slippage model commonly applied to charge density waves.
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AffiliationNational Research Council Canada
Peer reviewedNo
NPARC number12327867
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Record identifiera78acd53-ddf1-4c74-a810-a784a6254e7a
Record created2009-09-10
Record modified2016-05-09
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