Structure, morphology and evolution of interfaces in Si/Si1-xGex superlattices

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DOIResolve DOI: http://doi.org/10.1557/PROC-355-9
AuthorSearch for: ; Search for: ; Search for:
TypeArticle
Proceedings titleEvolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, U.S.A.
Series titleMaterials Research Society symposia proceedings; no. 355
Conference1994 MRS Fall Meeting: Symposium B1: Evolution of Thin-Film and Surface Structure and Morphology, November 28-December 2, 1994, Boston, Massachusetts, U.S.A.
ISSN0272-9172
ISBN1558992561
9781558992566
Pages914; # of pages: 6
AbstractThe interfaces in Si0.65Ge0.35/Si superlattices grown at different temperatures (250–750 °C) and number of repetitions (5, 10, 20) are studied by x-ray and Raman scattering techniques. At 250 °C the interfaces are chemically abrupt, but exhibit a pronounced vertically correlated physical roughness that increases in magnitude with thickness. In the range of 400–550 °C interfaces are smooth but intermixed over at least two monolayers, and asymmetrically broadened with the alloy/Si interfaces width about twice (0.25 vs 0.5 nm) that of the Si/alloy interfaces. At higher temperatures (620–750 °C) undulations of 1 nm amplitude and 100 nm length scale develop at the alloy/Si interfaces. This morphological change appears to be strain-driven and causes some relaxation of the built-in strain. Moderate annealing (20 s at 750 °C) induces partial relaxation of the superlattices and out-diffusion (∼0.5 nm) of Ge into the contiguous Si layers, but has relatively little effect on the interfacial widths.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328540
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Record identifiera79d3029-4568-488f-8b41-71dc9c1ab87f
Record created2009-09-10
Record modified2016-05-09
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