Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation

Download
  1. Get@NRC: Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.114823
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume67
Issue20
Pages29542956; # of pages: 3
Subjectenergy gap; gallium arsenides; gallium phosphides; indium arsenides; indium phosphides; ion implantation; mixing; quantum efficiency; quantum wells; semiconductor lasers; threshold current; tuning
AbstractThe technique of ion-induced quantum well intermixing using broad area, high energy (1 MeV P⁺ ) ion implantation has been used to tune the emission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 �m. The optical quality of the band-gap shifted material is assessed using low-temperature photoluminescence (PL). The band-gap tuned lasers are characterized in terms of threshold current density and external quantum efficiency and exhibit blue shifts in the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating active as well as passive optoelectronic devices.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328305
Export citationExport as RIS
Report a correctionReport a correction
Record identifieraa5ab9fd-9a62-41d7-b984-7495e3a0be5f
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)