High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 μm

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DOIResolve DOI: http://doi.org/10.1049/el.2012.0109
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TypeArticle
Journal titleElectronics Letters
ISSN0013-5194
Volume48
Issue7
Pages396397; # of pages: 2
AbstractA lateral etched-grating process was used to produce singlemode distributed feedback laser diodes at 3.23 μm. The devices are based on InGaAsSb/AlInGaAsSb type-I quantum well active regions grown on GaSb substrates by molecular beam epitaxy. The lasers were used in high-resolution spectroscopy of methane gas near the v3, R7 vibrational absorption transitions.
Publication date
PublisherIEEE
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21268058
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Record identifieraab00c4f-9896-44f3-bfd2-1ef8ef432c0b
Record created2013-04-05
Record modified2016-05-09
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