Fast light-emitting silicon-germanium nanostructures for optical interconnects

  1. (PDF, 1 MB)
DOIResolve DOI:
AuthorSearch for:
Proceedings titleInformation Photonics (IP), 2011 ICO International Conference on
ConferenceInternational Conference on Information Photonics, 18-20 May 2011, Ottawa, Ontario, Canada
AbstractEpitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number19734682
Export citationExport as RIS
Report a correctionReport a correction
Record identifierab1c6889-d1ed-41e4-8249-8cb71ed183fb
Record created2012-04-13
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)