Strain analysis of highly scalable single InAs/InP quantum dots in a stress-sensitive environment

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DOIResolve DOI: http://doi.org/10.1063/1.4817758
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume103
Issue6
Article number61901
SubjectComputational studies; Emission spectrums; InAs/InP quantum dots; Pseudopotential calculation; Quantum information systems; Self assembled quantum dots; Single-photon source; Stress sensitive; Emission spectroscopy; Quantum optics; Semiconductor quantum dots
AbstractWe perform an experimental and computational study of the effects of external stress and intermixing on single site-selected InAs/InP quantum dots in a highly scalable stress-sensitive environment. While such effects are well known for their ability to tune emission spectra, little is known on how they influence emission shell spacing, electron-hole effective mass renormalization, and the physical size of the embedded quantum dot, which are all important parameters affecting the intended functionality. We show excellent agreement between experiment and finite-element solutions of the coupled Navier and Schrödinger equations, including recent atomistic pseudopotential calculations in the literature. These results indicate that using single self-assembled quantum dots in highly scalable, stress-sensitive settings as active elements in future bottom-up nanosystems offers greater versatility to not only quantum information systems where they serve as scalable single-photon sources but also to ultra-sensing capabilities in future nano-electro-mechanical architectures.
Publication date
LanguageEnglish
AffiliationInformation and Communication Technologies; Security and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270367
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Record identifierab62bf39-7df5-48f8-b14b-cc7472589bcb
Record created2014-02-05
Record modified2016-05-09
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