Intersubband infrared detector with optimized valence band quantum wells for 3--5 mu m wavelength region

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DOIResolve DOI: http://doi.org/10.1063/1.369062
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TypeArticle
Journal titleJournal Of Applied Physics
Volume85
Issue5
Pages29722976; # of pages: 5
Subjectaluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; infrared spectra; light polarisation; quantum well devices; semiconductor quantum wells; valence bands
AbstractWe present results on a p-type intersubband infrared detector for the 3–5 µm wavelength region with optimal quantum well design. For valence band quantum wells made by the AlGaAs/GaAs heterosystem with negligible strain, the ground state subband is the first heavy hole subband, and a structure with the second light hole subband in resonance with the top of the barrier is optimal for normal incidence. Using this resonance design, the fabricated detector shows good performance with a background limited operating temperature of 100 K. Our experiments also show a clear polarization dependence for different intersubband transitions involving heavy hole to heavy hole and heavy hole to light hole processes.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327201
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Record identifierac97121e-3b27-428b-bbab-b9a045f6bacd
Record created2009-09-10
Record modified2016-05-09
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