Narrow channel breakdown in GaAs/AlGaAs Heterostructures

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DOIResolve DOI: http://doi.org/10.1016/0039-6028(88)90680-2
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TypeArticle
Journal titleSurface Science
ISSN0039-6028
Volume196
Issue1-Mar
Pages165170; # of pages: 6
AbstractWe have studied the breakdown characteristics of a narrow two-dimensional electron gas channel in GaAs/AlGaAs heterostructures over a wide temperature range before and after illumination. We report on the behaviour of the breakdown current, the asymmetry of the Shubnikov-de Haas oscilations and the appearance of step-like structures in the diagonal resistivity πvv. The step-like features are not consistent with a quasi-elastic inter Landau level scattering mechanism. © 1987.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedYes
NPARC number21274637
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Record identifierad17e871-4625-41c9-8ae8-f6984c6cba4b
Record created2015-03-18
Record modified2016-05-09
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