The mechanism of photoenhanced wet etching of GaN

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TypeArticle
Proceedings titleIII-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-fourth State-of-the-Art Program on compound Semiconductors (SOTAPOCS XXXVI)
Series titleElectrochemical Society Proceedings; Volume 2001-1
ConferenceSymposium on III-Nitride Based Semiconductor Electronic and Optical Devices and the 34th State-of-the-Art Program on compound Semiconductors (SOTAPOCS XXXVI), 25-30 March 2001, Washington, DC, USA
ISBN1-56677-307-5
Pages193203; # of pages: 11
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327408
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Record identifierae2ddb92-f6cb-424f-9328-159f75e05f00
Record created2009-09-10
Record modified2016-05-09
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