Afm Study of CeO2 Growth on Sapphire as a Buffer Layer for YBa2Cu3O7

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DOIResolve DOI: http://doi.org/10.1557/PROC-401-339
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TypeArticle
Proceedings title1995 MRS Fall Meeting - Symposium G – Epitaxial Oxide Thin Films II
Series titleMaterials Research Society Symposia Proceedings; no. 401
Conference1995 MRS Fall Meeting: Symposium G: Epitaxial Oxide Thin Films II, November 26-30, 1995, Boston, Massachusetts, U.S.A.
ISSN0272-9172
ISBN1558993045
9781558993044
Article numberL9.11
AbstractThe structure of CeO2 films grown on (1102) sapphire and on YBCO thin films was investigated. The films reported on here were grown by pulsed excimer laser deposition and their surface structure was probed using atomic force microscopy. We found that CeO2 films grown on sapphire were epitaxial with a granular structure which is smooth on an atomic scale. We see evidence of a surface reconstruction on a very smooth CeO2 (100) oriented surface. At higher growth temperatures, three dimensional islands begin to form. When a CeO2 film is grown on top of a YBCO film, the growth mode is two dimensional. The steps in this layer by layer growth are a surprisingly large 2 nm. This is about equal to 4 times the CeO2 lattice constant. This step height appears to be temperature dependent.
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Noteyes
Peer reviewedNo
NPARC number12338400
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Record identifierae62cea5-9227-4675-b601-67023c26a44b
Record created2009-09-10
Record modified2016-05-09
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