Sequential nanopatterned block copolymer self-assembly on surfaces

  1. Available on May 18, 2017
  2. Get@NRC: Sequential nanopatterned block copolymer self-assembly on surfaces (Opens in a new window)
DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
Journal titleLangmuir
AbstractBottom-up self-assembly of high-density block-copolymer nanopatterns is of significant interest for a range of technologies, including memory storage and low-cost lithography for on-chip applications. The intrinsic or native spacing of a given block copolymer is dependent upon its size (N, degree of polymerization), composition, and the conditions of self-assembly. Polystyrene-block-polydimethylsiloxane (PS-b-PDMS) block copolymers, which are well-established for the production of strongly segregated single-layer hexagonal nanopatterns of silica dots, can be layered sequentially to produce density-doubled and -tripled nanopatterns. The center-to-center spacing and diameter of the resulting silica dots are critical with respect to the resulting double- and triple-layer assemblies because dot overlap reduces the quality of the resulting pattern. The addition of polystyrene (PS) homopolymer to PS-b-PDMS reduces the size of the resulting silica dots but leads to increased disorder at higher concentrations. The quality of these density-multiplied patterns can be calculated and predicted using parameters easily derived from SEM micrographs of corresponding single and multilayer patterns; simple geometric considerations underlie the degree of overlap of dots and layer-to-layer registration, two important factors for regular ordered patterns, and clearly defined dot borders. Because the higher-molecular-weight block copolymers tend to yield more regular patterns than smaller block copolymers, as defined by order and dot circularity, this sequential patterning approach may provide a route toward harnessing these materials, thus surpassing their native feature density.
Publication date
PublisherACS Publications
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number23000351
Export citationExport as RIS
Report a correctionReport a correction
Record identifierae78d03e-4423-4de5-89fb-823bb3c0676b
Record created2016-07-08
Record modified2016-07-08
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)