Formation of High-Quality Nitrided Silicon Dioxide Films Using Electron-Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane

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DOIResolve DOI: http://doi.org/10.1149/1.1836699
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TypeArticle
Journal titleJournal Of The Electrochemical Society
Volume143
Issue5
Pages16811684; # of pages: 4
Subjectchemical vapour deposition; cyclotron resonance; Fourier transform spectroscopy; nitridation; oxygen compounds; plasma deposited coatings; plasma diagnostics; silicon compounds
AbstractHigh-quality silicon dioxide films with nitrogen at the Si/SiO2 interface have been produced by plasma-enhanced chemical vapor deposition using an electron-cyclotron resonance source with silane and nitrous oxide. The nitride layer, which amounts to approximately one monolayer, is produced by a plasma nitridation process that dominates over chemical vapor deposition during the initial stages of growth. X-ray photoelectron spectroscopy has been used to show that the nitrogen atoms are bonded to three silicon atoms and the N[Single Bond]O bond concentration is below the detection limit. Fourier transform infrared spectroscopy indicates that the films have excellent bulk properties. Interface state densities of 2 � 1011 eV�1 cm�2 have been obtained by capacitance-voltage analysis of aluminum capacitors. We discuss the prospects for reducing this level by optimizing the process.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328299
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Record identifieraeecfb9c-8ce9-4c94-9759-ddb25237a8b8
Record created2009-09-10
Record modified2016-05-09
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