Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.45.11736
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TypeArticle
Journal titlePhysical review. B, Condensed matter
ISSN01631829
Volume45
IssueMay 15, 20
Pages1173611743; # of pages: 8
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada
Peer reviewedNo
Identifier10174576
NRC number26
NPARC number8898072
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Record identifierb00bbe36-a84f-4f89-a4f5-7bb2eb9b3360
Record created2009-04-22
Record modified2016-05-09
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