Influence of high energy particle radiation on GaAs/AlGaAs quantum well infrared photodetectors

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TypeArticle
Journal titleSemiconductor science and technology
ISSN0268-1242
Volume12
Issue8
Pages947952; # of pages: 6
AbstractWe report on the influence of high energy proton, alpha, oxygen ion and gold ion radiation on the performance of GaAs/AlGaAs quantum well infrared photodetectors. The particle energies of proton, alpha and oxygen ions ranged from 0.8 MeV to 30 MeV and the fluences varied from 1010 to 1016 cm-2. The energy of Au ions was 1.5 GeV and the fluence ranged from 106 to 109 cm-2. The dark current and spectral response of irradiated devices were measured. A device operability defined by the fractional reduction of detector responsivity was used to evaluate the performance degradation. Device damage increases with fluence for all particles. It also increases with the mass of the ion and with decreasing energy of the particle.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10401556
NPARC number12338933
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Record identifierb10cb137-51ce-4a9c-b119-da87702f02be
Record created2009-09-11
Record modified2016-05-09
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