Very High-Density (23 fF/um2) RF MIM Capacitors Using high-k TaTiO as the Dielectric

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DOIResolve DOI: http://doi.org/10.1109/LED.2005.856708
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume26
Issue10
Pages728730; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12743948
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Record identifierb1379ada-bc89-4f03-85e8-c2f4d5a00f54
Record created2009-10-27
Record modified2016-05-09
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