Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition

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DOIResolve DOI: http://doi.org/10.1063/1.117609
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume69
Issue10
Pages14441446; # of pages: 3
SubjectANNEALING; CVD; DIFFUSION; GERMANIUM SILICIDES; INTERFACE STRUCTURE; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICON; STRAINS
AbstractSiGe quantum wells were grown at 525 °C using a commercially available, ultrahigh vacuum–chemical vapor deposition system, in which the purity of the material and quality of interfaces have already been demonstrated. Changes in photoluminescence line energies are monitored and the extent of interdiffusion in the wells during annealing is calculated. A strong initial enhancement of the diffusivity is observed in as-grown material. Material annealed using a two-step process in which strain and Ge peak concentrations are unchanged after the first (low temperature) step, shows a much lower interdiffusion during the second step. It is argued that strain alone cannot explain the enhanced interdiffusion, which is, thus, attributed to grown-in, nonequilibrium point defects.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10100234
NRC number1123
NPARC number5763471
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Record identifierb1a33b57-8703-455a-87c4-d4ee95652628
Record created2009-03-29
Record modified2016-05-09
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