Patchwork Field Emission Properties of Lanthanum Monosulfide Thin Films

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DOIResolve DOI: http://doi.org/10.1116/1.2354161
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B
Volume24
Issue5
Pages24122416; # of pages: 5
AbstractThe field emission properties of lanthanum monosulfide (LaS) films, deposited on Si substrates by pulsed laser deposition, have been thoroughly analyzed via the scanning anode field emission microscopy technique. Using the conventional Fowler-Nordheim relation, the work function of LaS thin films has been extracted from the slope of the plot ln (J/F2) vs 1/F, where J is the field emission current density and F is the local applied electric field. The threshold for an emission current density of 1 mA/cm2 occurs around a 230 V/μm electric field applied across the vacuum gap. This leads to an outstanding, reproducible effective work function value of ~1 eV across a 1 cm2 sample area.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744346
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Record identifierb26b9554-9f06-4e5b-96fe-4bbac32edff5
Record created2009-10-27
Record modified2016-05-09
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