Bandgap tuning of semiconductor quantum well structures using ion implantation

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DOIResolve DOI: http://doi.org/10.1006/spmi.1994.1075
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TypeArticle
Journal titleSuperlattices and Microstructures
Volume15
IssueJune 4
Pages385389; # of pages: 4
AbstractIon induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated sequential ion implants and rapid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle. The effectiveness of broad area high energy implantation (8 MeV As4+) on QW intermixing was also established for GRINSCH (graded-index separate confinement heterostructure) QW laser structures grown in InGaAs/GaAs. Lastly, preliminary work illustrating the effects of implant temperature and ion current density was carried out for InGaAs/GaAsQWs.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338044
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Record identifierb2ec9550-c628-4d03-9a50-f8308e29bc0f
Record created2009-09-10
Record modified2016-05-09
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