Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide

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DOIResolve DOI: http://doi.org/10.1364/OL.37.000365
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TypeArticle
Journal titleOPTICS LETTERS
Volume37
Issue3
Pages365367; # of pages: 3
AbstractThe design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is 0.7 dB and the 3 dB bandwidth is 26 nm.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number19577564
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Record identifierb30baa11-b395-4bb4-8143-a1957698e924
Record created2012-02-29
Record modified2016-05-09
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