Optical properties of multiple, delta-doped Si:B/Si layers

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DOIResolve DOI: http://doi.org/10.1557/PROC-0958-L10-23
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TypeArticle
Journal titleMRS Online Proceedings Library
ISSN1946-4274
Volume958
Article number0958-L10-23
Subjectluminescence; dopant; molecular beam epitaxy (MBE)
AbstractReliable fabrication of high-speed, delta-doped transistors and better understanding of two-dimensional metal-insulator transitions can be achieved using silicon molecular beam epitaxy (MBE). However, this fabrication technique should be performed with care, avoiding dopant segregation on epitaxial Si surfaces and improving the doping efficiency. Here we report comprehensive structural and optical investigations of MBE-grown Si/delta-doped Si:B multilayer structures. Measurements of Auger electron spectroscopy, Raman scattering, optical reflection and photoluminescence are performed. Our results indicate nearly metallic conductivity at room temperature with metal-insulator phase transition near T ∼100 K. In contrast to recently reported data, no enhancement of photoluminescence at room temperature is found. Occasionally, a few samples in specific areas exhibit strong photoluminescence at 1.4-1.6 micron attributed to structural defects, most likely due to B segregation.
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12346191
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Record identifierb345b70d-07c2-4cc0-95d5-64eaa9d355de
Record created2009-09-17
Record modified2017-04-11
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