Design optimizations of InGaAsN(Sb) subcells for concentrator photovoltaic systems

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DOIResolve DOI: http://doi.org/10.1116/1.4939754
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
ISSN2166-2746
Volume34
Issue2
Article number02M103
SubjectCarrier mobility; Photovoltaic cells; Concentrator photovoltaic systems; Design optimization; Drift-diffusion simulation; Germanium substrates; Lattice-matched; Material systems; Realistic materials; Sun illumination; Solar cells
AbstractThe InGaAsN(Sb) material system is an attractive candidate for use in lattice-matched four-junction (4J) solar cells based on germanium substrates. Design optimizations for an InGaAsN(Sb) subcell are proposed for optimal power conversion efficiency within a 4J solar cell under a highly concentrated AM1.5D solar spectrum. The performance of the subcell is modeled using drift-diffusion simulations using Crosslight Apsys. An InGaAsN(Sb) test subcell was fabricated to obtain realistic materials parameters for the optimization of subcell performance. A thin InGaAsN(Sb) subcell is suggested for operation at 1000 Sun illumination intensities at low carrier lifetimes and mobilities.
Publication date
PublisherAIP Publishing
LanguageEnglish
AffiliationNational Research Council Canada; Information and Communication Technologies
Peer reviewedYes
NPARC number21277459
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Record identifierb35d0e37-a5a3-4534-9c5f-64aca9836510
Record created2016-03-09
Record modified2016-05-09
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