One-flux analysis of current blocking in double heterostructure bipolar transistors with composite collectors

DOIResolve DOI: http://doi.org/10.1109/CORNEL.1995.482426
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TypeArticle
Proceedings titleProceedings, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits : August 7, 8 & 9, 1995, Cornell University, Ithaca, New York
ConferenceIEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY , USA, August 7-9, 1995
ISBN0-7803-2442-0
Pages113122; # of pages: 10
SubjectCC-DHBTs; composite collectors; current blocking; double heterostructure bipolar transistors; drift-diffusion simulation; electron accumulation; gallium arsenide; heterojunction bipolar transistors; III-V semiconductors; indium compounds; InP-InGaAs-InP; one-flux analysis; semiconductor device models; spacer layer
AbstractWe use the flux method of McKelvey, Longini, and Brody [Physical Review 123, 51 (1961)] to analyze current blocking in double heterostructure bipolar transistors (DHBTs) with composite collectors (CC). We include the effects of electron accumulation in the spacer layer in the collector, and show that this accumulation has severe effects at higher currents, imposing an intrinsic limit on the simplest CC design. We compare the results from the flux method with drift-diffusion simulations and measurements on InP/InGaAs/InP CC-DHBTs
Publication date
LanguageFrench
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12333697
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Record identifierb3dd5ea4-fddf-452a-ac3e-b935d3240bd4
Record created2009-09-10
Record modified2016-05-09
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