Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

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DOIResolve DOI: http://doi.org/10.1016/j.mee.2010.11.045
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TypeArticle
Journal titleMicroelectronic Engineering
ISSN0167-9317
Volume88
Issue8
Pages23382341; # of pages: 4
SubjectDoubly Clamped Cantilevers; HSQ; Hydrogen Silsesquioxane; Nanomechanical resonators; Silicon Carbon Nitride; Sub-10 nm; Electron beams; Electron optics; Electron beam lithography
AbstractIn this work, we report the fabrication of sub-10 nm wide, doubly-clamped silicon carbon nitride (SiCN) resonators of up to 5 μm lengths. An existing resonator fabrication process has undergone a major improvement through the use of a single hydrogen silsesquioxane (HSQ) masking layer for SiCN patterned using electron beam lithography. Novel development strategies, comprising hot development and HF-trimming development, were also used. The crucial role of post-exposure resist processing in improving the resonator resolution and uniformity was demonstrated. Application of the optimized lithographic process has allowed us to claim the narrowest suspended bridge structures of several microns in length achieved to date. © 2011 Elsevier B.V. All rights reserved.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21271955
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Record identifierb4c676dc-af10-4489-b8a8-673d652ad4a5
Record created2014-05-13
Record modified2016-05-09
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